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ingan
ingan (ˈɪŋən) Also -un, -in. [Phonetic development, with i as in mither, brither, hinnie, and (ŋ) for (ɲ), as ring for reign, etc.] Sc. and Eng. dial. form of onion.1725 Ramsay Gentle Sheph. ii. i. Sang viii, She can mix fu' nice The gusty ingans wi' a curn o' spice. 1818 Scott Rob Roy xiv, Sae mony... Oxford English Dictionary
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Ingyeo ingan
Ingyeo ingan (), sometimes translated The Extra Mortals, is a 1964 South Korean film directed by Yu Hyun-mok. wikipedia.org
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InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN ... - Nature
The central wavelength of the nanoporous DBR structure was located at 442.3 nm with a 57 nm linewidth and a 97.1% peak reflectivity. The effective cavity length (6.0λ), the effective penetration ...
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InGaN light-emitting diodes with embedded nanoporous GaN distributed ...
A nanoporous DBR structure having a 417 nm center wavelength, 34 nm bandwidth, and 96.7% reflectivity was measured in the full EC-LED structure. High EL emission intensity was observed surrounding the mesa region with a 30 µm lateral etching width, indicating that the nanoporous DBR structure had high light reflectance and was electrically ...
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Hongik Ingan
Hongik Ingan () is the official educational motto of South Korea. The phrase can be translated to English as "To broadly benefit the human world". Hongik Ingan is the founding idea of Gojoseon and is known as the first concept founded by Dangun Wanggeom. wikipedia.org
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ingin
ingin variant of ingan dial., onion. Oxford English Dictionary
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Olle Inganäs
Olle Inganäs (born 1951), is a Swedish Professor of Biomolecular and Organic Electronics at Linköping University, Sweden. Professor Inganäs received his doctorate in 1984 from Linköping University. wikipedia.org
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Aston Ingham
In 1242, it was Estun Ingan for the Ingan family, who had a manor there at the time. The land was then sold to the Ingayn (or Ingan) family, who added their name to the village name. wikipedia.org
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Hong Changsoo
수릉》, 연극과인간, 2004 / Sureung (Sureung), Yeonguekkwa Ingan, 2004. 《역사와 실존》, 연극과인간, 2006 / Yeoksawa Siljon (History and Existence), Yeonguekkwa Ingan, 2006. wikipedia.org
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Indium nitride
Alloyed with GaN, the ternary system InGaN has a direct bandgap span from the infrared (0.69 eV) to the ultraviolet (3.4 eV). Using one or more alloys of indium gallium nitride (InGaN), an optical match to the solar spectrum can be achieved. wikipedia.org
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N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red ...
The 750 nm devices, some of the smallest red emitting LEDs ever reported, showed a peak external quantum efficiency of 1.2% with emission at 620 nm. This is the first demonstration of a sub-micron scale LED emitting red light which can overcome the efficiency cliff of conventional top-down etched quantum well micro-LEDs.
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CN110444626A - Si衬底InGaN可见光探测器及制备方法与应用 - Google Patents
CN110444626A CN201910696574.XA CN201910696574A CN110444626A CN 110444626 A CN110444626 A CN 110444626A CN 201910696574 A CN201910696574 A CN 201910696574A CN 110444626 A CN110444626 A CN 110444626A Authority CN China Prior art keywords ingan layer substrate visible light detector Prior art date 2019-07-30 Legal status (The legal status is an assumption and is not a legal conclusion.
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铟镓氮InGaN实现红光的优势和挑战 - 知乎 - 知乎专栏
二 高In组分InGaN材料实现红光的优势. 为了实现高效发光白光LED，必须实现红，绿，蓝三基色的高效发光，而先能高效发光的技术路线。. AlGaInP基LEDs已经可用，随着波长的减小，并广泛用于长波长区域中的LED，但是，基于AlGaInP的LED在用作长波长发光二极管方面 ...
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Effect of inserted InGaN layer on the two-dimensional electron gas in ...
This paper studies the changes in electronic transport properties caused by InGaN as an AlGaN/GaN insertion layer, and considers the effects of the spontaneous polarization and piezoelectric polarization of AlGaN and InGaN barrier layers on the surface density of polarized charge, and the concentration of two-dimensional electron gas (2DEG) in Al<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>N/In ...
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Indium gallium nitride
providing correct material parameters of the InGaN/GaN alloys, theoretical approaches for AlGaN/GaN systems also apply to InGaN nanostructures. Photovoltaics The ability to perform bandgap engineering with InGaN over a range that provides a good spectral match to sunlight, makes InGaN suitable wikipedia.org
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