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Indium gallium nitride - Wikipedia
Indium gallium nitride is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III/group V direct ... en.wikipedia.org
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Highly efficient blue InGaN nanoscale light-emitting diodes - Nature
Indium gallium nitride (InGaN)-based micro-LEDs (μLEDs) are suitable for meeting ever-increasing demands for high-performance displays owing ... www.nature.com
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Efficient emission of InGaN-based light-emitting diodes
This paper reports our work of creating efficient InGaN-based orange and red LEDs on silicon(111) substrates at low current density. opg.optica.org
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ingan
ingan (ˈɪŋən) Also -un, -in. [Phonetic development, with i as in mither, brither, hinnie, and (ŋ) for (ɲ), as ring for reign, etc.] Sc. and Eng. dial. form of onion.1725 Ramsay Gentle Sheph. ii. i. Sang viii, She can mix fu' nice The gusty ingans wi' a curn o' spice. 1818 Scott Rob Roy xiv, Sae mony... Oxford English Dictionary
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ingan - Wiktionary, the free dictionary
Contents · 1 Old English. 1.1 Etymology; 1.2 Pronunciation; 1.3 Verb. 1.3.1 Conjugation. 1.4 References · 2 Scots. 2.1 Alternative forms; 2.2 Etymology; 2.3 ... en.wiktionary.org
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Recent progress and prospects on InGaN-Based solar cells
III-nitride InGaN material is an ideal candidate for the fabrication of high performance photovoltaic (PV) solar cells, especially for high-temperature ... www.sciencedirect.com
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Ingyeo ingan
Ingyeo ingan (), sometimes translated The Extra Mortals, is a 1964 South Korean film directed by Yu Hyun-mok. wikipedia.org
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InGaN micro-light-emitting diodes monolithically grown on Si - Nature
Here we report, for the first time, μLEDs grown directly on Si with submicron lateral dimensions. The μLEDs feature ultra-stable, bright green emission. www.nature.com
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InGAN: Capturing and Remapping the "DNA" of a Natural Image
In this paper we propose an "Internal GAN" (InGAN) - an image-specific GAN - which trains on a single input image and learns its internal distribution of ... arxiv.org
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Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes ...
InGaN alloys have a direct and tunable bandgap spanning from 0.7 to 3.4 eV, which makes them promising candidates for wide applications ... onlinelibrary.wiley.com
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Enhanced Efficiency InGaN/GaN Multiple Quantum Well Structures ...
We study the impact of strain engineering by exploring the influence of the number of superlattice (SL) layers underneath InGaN/GaN multiple quantum wells ( ... pubs.acs.org
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Boosting the efficiency of InGaN-based green LEDs grown on Si ...
InGaN-based micro-light-emitting diodes (LEDs) grown on Si have gained tremendous interest for full-color displays. pubs.aip.org
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InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN ... - Nature
The central wavelength of the nanoporous DBR structure was located at 442.3 nm with a 57 nm linewidth and a 97.1% peak reflectivity. The effective cavity length (6.0λ), the effective penetration ...
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InGaN light-emitting diodes with embedded nanoporous GaN distributed ...
A nanoporous DBR structure having a 417 nm center wavelength, 34 nm bandwidth, and 96.7% reflectivity was measured in the full EC-LED structure. High EL emission intensity was observed surrounding the mesa region with a 30 µm lateral etching width, indicating that the nanoporous DBR structure had high light reflectance and was electrically ...
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Hongik Ingan
Hongik Ingan () is the official educational motto of South Korea. The phrase can be translated to English as "To broadly benefit the human world". Hongik Ingan is the founding idea of Gojoseon and is known as the first concept founded by Dangun Wanggeom. wikipedia.org
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